|Table of Contents|

 Effect of Dopant Concentration on the Defect Structure in Zn2+Doped Ce:Cu:LiNbO3 Crystals
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《哈尔滨理工大学学报》[ISSN:1007-2683/CN:23-1404/N]

Issue:
2019年01期
Page:
103-107
Research Field:
材料科学与工程
Publishing date:

Info

Title:
 Effect of Dopant Concentration on the Defect Structure in Zn2+Doped Ce:Cu:LiNbO3 Crystals
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Author(s):
 WANG Luping1DAI Li2HAN Xianbo2SHAO Yu2
 (1.School of Material Science and Engineering , Harbin University of Science and Technology, Harbin 150040, China;
2.School of Applied Sciences, Harbin University of Science and Technology, Harbin 150080, China)
Keywords:
 Keywords:Zn:Ce:Cu:LiNbO3 crystal optical damage resistance ability effective segregation coefficient
PACS:
TP3334
DOI:
10.15938/j.jhust.2019.01.017
Abstract:
 Abstract:A series of Zn:Ce:Cu:LiNbO3 crystals doped with Zn2+(1, 3, 5, 7 mol%) were grown by the Czochralski method from the congruent melt In order to study the influence of Zn2 + ion concentration to the defect structure of Zn: Ce: Cu: LiNbO3 single crystal, we choose lightinduced scattering experiment to measure the optical damage resistance ability of the Zn:Ce:Cu:LiNbO3 crystal The effective segregation coefficient of doped ions of Zn:Ce:Cu:LiNbO3 crystals were measured by inductively coupled plasmaatomic emission spectrum(ICPAES) It was found that the optical damage resistance ability enhanced with increasing of ZnO concentration in the melt and effective segregation coefficient of Zn2+ will increased with increasing of ZnO concentration in the melt at first, which reach to the climax when the doped Zn2+ concentration is 5mol%, then it decreased The effective segregation coefficient of Ce3+ and Cu2+ will decreased with increasing of ZnO concentration in the melt The experimental were analyzed based on the Livacancy defect model

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Last Update: 2019-03-26